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1

Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing

Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph, Markus Weyers

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 716 KB

english, 2001

2

Reliability considerations of III-nitride microelectronic devices

Joachim Würfl, Vera Abrosimova, Jochen Hilsenbeck, Erich Nebauer, Walter Rieger, Günther Tränkle

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 308 KB

english, 1999

3

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Fleury, Clément, Zhytnytska, Rimma, Bychikhin, Sergey, Cappriotti, Mattia, Hilt, Oliver, Visalli, Domenica, Meneghesso, Gaudenzio, Zanoni, Enrico, Würfl, Joachim, Derluyn, Joff, Strasser, Gottfried, P

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.61 MB

english, 2013

4

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100nm scale unpassivated regions around the gate periphery

Ivo, Ponky, Cho, Eunjung Melanie, Kotara, Przemyslaw, Schellhase, Lars, Lossy, Richard, Zeimer, Ute, Mogilatenko, Anna, Würfl, Joachim, Tränkle, Günther, Glowacki, Arkadiusz, Boit, Christian

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 1.19 MB

english, 2014

5

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

Hilt, Oliver, Bahat-Treidel, Eldad, Cho, Eunjung, Singwald, Sebastian, Wurfl, Joachim

Year:

2012

Language:

english

File:

PDF, 1.09 MB

english, 2012

6

Analysis of material modifications caused by nanosecond pulsed UV laser processing of SiC and GaN

Olaf Krüger, Tim Wernicke, Joachim Würfl, Roland Hergenröder, Günther Tränkle

Journal:

Applied Physics A: Materials Science & Processing

Year:

2008

Language:

english

File:

PDF, 465 KB

english, 2008

7

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures

A. Glowacki, P. Laskowski, C. Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 766 KB

english, 2009

8

Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance

Athikom Manoi, James W. Pomeroy, Richard Lossy, Reza Pazirandeh, Joachim Würfl, Michael J. Uren, Trevor Martin, Martin Kuball

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 338 KB

english, 2011

9

Reliability studies on GaN HEMTs with sputtered Iridium gate module

Richard Lossy, Hervé Blanck, Joachim Würfl

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 604 KB

english, 2012

10

[IEEE 2009 IEEE MTT-S International Microwave Symposium Digest (MTT) - Boston, MA, USA (2009.06.7-2009.06.12)] 2009 IEEE MTT-S International Microwave Symposium Digest - Highly robust X-band LNA with extremely short recovery time

Rudolph, Matthias, Dewitz, Mike, Liero, Armin, Khalil, Ibrahim, Chaturvedi, Nidhi, Wipf, Christian, Bertenburg, Ralf M., Miller, Justin, Wurfl, Joachim, Heinrich, Wolfgang, Trankle, Gunther

Year:

2009

Language:

english

File:

PDF, 911 KB

english, 2009

11

Breakdown and dynamic effects in GaN power switching devices

Würfl, Joachim, Hilt, Oliver, Bahat-Treidel, Eldad, Zhytnytska, Rimma, Kotara, Przemyslaw, Krüger, Olaf, Brunner, Frank, Weyers, Markus

Journal:

Physica status solidi

Year:

2013

Language:

english

File:

PDF, 473 KB

english, 2013

12

Discussion on “An electric harmonic analyser” before the Scottish Centre, at Glasgow, 9 December, 1924

Badawi, Nasser, Bahat-Treidel, Eldad, Dieckerhoff, Sibylle, Hilt, Oliver, Wurfl, Joachim

Journal:

Journal of the Institution of Electrical Engineers

Year:

1925

Language:

english

File:

PDF, 463 KB

english, 1925

13

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

Hilt, Oliver, Zhytnytska, Rimma, Bocker, Jan, Bahat-Treidel, Eldad, Brunner, Frank, Knauer, Arne, Dieckerhoff, Sibylle, Wurfl, Joachim

Year:

2015

Language:

english

File:

PDF, 653 KB

english, 2015

14

0.25-um GaN TeraFETs Optimized as THz Power Detectors and Intensity-Gradient Sensors

Boppel, Sebastian, Ragauskas, Mantas, Hajo, Ahid, Bauer, Maris, Lisauskas, Alvydas, Chevtchenko, Sergey, Ramer, Adam, Kasalynas, Irmantas, Valusis, Gintaras, Wurfl, Hans-Joachim, Heinrich, W., Trankle

Journal:

IEEE Transactions on Terahertz Science and Technology

Year:

2016

Language:

english

File:

PDF, 470 KB

english, 2016

15

[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Novel monolithically integrated bidirectional GaN HEMT

Kuring, Carsten, Hilt, Oliver, Bocker, Jan, Wolf, Mihaela, Dieckerhoff, Sibylle, Wurfl, Joachim

Year:

2018

Language:

english

File:

PDF, 639 KB

english, 2018

16

[IEEE 2019 IEEE Energy Conversion Congress and Exposition (ECCE) - Baltimore, MD, USA (2019.9.29-2019.10.3)] 2019 IEEE Energy Conversion Congress and Exposition (ECCE) - Impact of Substrate Termination on Dynamic On-State Characteristics of a Normally-off Monolithically Integrated Bidirectional GaN HEMT

Kuring, Carsten, Wieczorek, Nick, Hilt, Oliver, Wolf, Mihaela, Bocker, Jan, Wurfl, Joachim, Dieckerhoff, Sibylle

Year:

2019

File:

PDF, 1.27 MB

2019

17

Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC

Tim Wernicke, Olaf Krüger, Martin Herms, Joachim Würfl, Holm Kirmse, Wolfgang Neumann, Thomas Behm, Gert Irmer, Günther Tränkle

Journal:

Applied Surface Science

Year:

2007

Language:

english

File:

PDF, 834 KB

english, 2007

18

Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors

Serguei A. Chevtchenko, Frank Brunner, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 320 KB

english, 2010

19

Gallium nitride powerbar transistors with via holes fabricated by laser ablation

Richard Lossy, Armin Liero, Olaf Krüger, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 253 KB

english, 2006

20

Strain engineering of AlGaN-GaN HFETs grown on 3 inch 4H-SiC

Frank Brunner, Outi Reentilä, Joachim Würfl, Markus Weyers

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 304 KB

english, 2009

21

Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

Eldad Bahat-Treidel, Ibrahim Khalil, Oliver Hilt, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 338 KB

english, 2009

22

Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement

Eldad Bahat-Treidel, Oliver Hilt, Fank Brunner, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 405 KB

english, 2009

23

Electroluminescence characterization of AlGaN/GaN HEMTs

Richard Lossy, Arkadiusz Glowacki, Christian Boit, Joachim Würfl

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 205 KB

english, 2009

24

AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates

Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 146 KB

english, 2010

25

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Frank Brunner, Eldad Bahat-Treidel, Melanie Cho, Carsten Netzel, Oliver Hilt, Joachim Würfl, Markus Weyers

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 222 KB

english, 2011

26

Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

Blaho, Michal, Gregušová, Dagmar, Jurkovič, Michal, Haščík, Štefan, Fedor, Ján, Kordoš, Peter, Fröhlich, Karol, Brunner, Frank, Cho, Melani, Hilt, Oliver, Würfl, Joachim, Kuzmík, Ján

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.78 MB

english, 2013

27

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Hilt, Oliver, Kotara, Przemyslaw, Brunner, Frank, Knauer, Arne, Zhytnytska, Rimma, Wurfl, Joachim

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.56 MB

english, 2013

28

[IEEE 2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA (2006.06.11-2006.06.16)] 2006 IEEE MTT-S International Microwave Symposium Digest - A Compact 16 Watt X-Band GaN-MMIC Power Amplifier

Klockenhoff, Harald, Behtash, Reza, Wurfl, Joachim, Heinrich, Wolfgang, Trankle, Gunther

Year:

2006

Language:

english

File:

PDF, 3.90 MB

english, 2006

29

[IEEE 2006 European Microwave Conference - Manchester, UK (2006.09.10-2006.09.15)] 2006 European Microwave Conference - Advances in GaN-based discrete power devices for L- and X-band applications

Wurfl, Joachim, Behtash, Reza, Lossy, Richard, Liero, Armin, Heinrich, Wolfgang, Trankle, Gunther, Hirche, Klaus, Fischer, G.

Year:

2006

Language:

english

File:

PDF, 377 KB

english, 2006

30

Self-Heating in GaN Transistors Designed for High-Power Operation

Kuzmik, Jan, Tapajna, Milan, Valik, Lukas, Molnar, Marian, Donoval, Daniel, Fleury, Clement, Pogany, Dionyz, Strasser, Gottfried, Hilt, Oliver, Brunner, Frank, Wurfl, Joachim

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.37 MB

english, 2014

31

[IEEE 2006 European Microwave Integrated Circuits Conference - Manchester, UK (2006.09.10-2006.09.13)] 2006 European Microwave Integrated Circuits Conference - Advances in GaN-based discrete power devices for L- and X-band applications

Wurfl, Joachim, Behtash, Reza, Lossy, Richard, Liero, Armin, Heinrich, Wolfgang, Trankle, Gunther, Hirche, Klaus, Fischer, G.

Year:

2006

Language:

english

File:

PDF, 378 KB

english, 2006

32

[IEEE 2007 European Microwave Integrated Circuit Conference - Munich, Germany (2007.10.8-2007.10.10)] 2007 European Microwave Integrated Circuit Conference - Current gain collapse in HBTs analysed by transient interferometric mapping method

Bychikhin, Sergey, Dubec, Viktor, Kuzmik, Jan, Wurfl, Joachim, Kurpas, Paul, Teyssier, Jean-Pierre, Pogany, Dionyz

Year:

2007

Language:

english

File:

PDF, 681 KB

english, 2007

33

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Influence of GaN cap on robustness of AlGaN/GaN HEMTs

Ivo, Ponky, Glowacki, Arkadiusz, Pazirandeh, Reza, Bahat-Treidel, Eldad, Lossy, Richard, Wurfl, Joachim, Boit, Christian, Trankle, Gunther

Year:

2009

Language:

english

File:

PDF, 764 KB

english, 2009

34

[IEEE 2013 15th European Conference on Power Electronics and Applications (EPE) - Lille, France (2013.09.2-2013.09.6)] 2013 15th European Conference on Power Electronics and Applications (EPE) - Evaluation of 600V GaN and SiC Schottky diodes at different temperatures

Badawi, Nasser, Bahat-Treidel, Eldad, Dieckerhoff, Sibylle, Hilt, Oliver, Wurfl, Joachim

Year:

2013

Language:

english

File:

PDF, 446 KB

english, 2013

35

[IEEE 2012 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2012.10.14-2012.10.18)] 2012 IEEE International Integrated Reliability Workshop Final Report - Reliability aspects of GaN based power devices for high voltage switching applications

Year:

2012

Language:

english

File:

PDF, 72 KB

english, 2012

36

Buried selectively etchable microstructures in GaAs using deep nitrogen implantation

Miao, Jianmin, Würfl, Joachim, Rück, Dorothee, Hartnagel, Hans

Journal:

Radiation Effects and Defects in Solids

Year:

1993

Language:

english

File:

PDF, 433 KB

english, 1993

37

WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors

Lu, Chung Yu, Hilt, Oliver, Lossy, Richard, Chaturvedi, Nidhi, John, Wilfred, Chang, Edward Yi, Würfl, Joachim, Tränkle, Günther

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 217 KB

english, 2009

38

High-voltage normally OFF GaN power transistors on SiC and Si substrates

Hilt, Oliver, Bahat-Treidel, Eldad, Knauer, Arne, Brunner, Frank, Zhytnytska, Rimma, Würfl, Joachim

Journal:

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

39

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Fleury, Clément, Capriotti, Mattia, Rigato, Matteo, Hilt, Oliver, Würfl, Joachim, Derluyn, Joff, Steinhauer, Stephan, Köck, Anton, Strasser, Gottfried, Pogany, Dionyz

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 1.15 MB

english, 2015

40

Class-S Amplifier at 450 MHz Using GaN-HEMT Power Switch MMICs

Meliani, Chafik, Wentzel, Andreas, Flucke, Jens, Ersoy, Erhan, Chaturvedi, Nidhi, Lossy, Richard, Schnieder, Frank, Janke, Bernd, Freyer, Stephan, Würfl, Hans-Joachim, Heinrich, Wolfgang

Journal:

Year:

2009

Language:

english

File:

PDF, 1.16 MB

english, 2009

41

[IEEE 2015 17th European Conference on Power Electronics and Applications (EPE '15 ECCE Europe) - Geneva, Switzerland (2015.9.8-2015.9.10)] 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) - Experimental analysis and modeling of GaN normally-off HFETs with trapping effects

Bocker, Jan, Just, Hendrik, Hilt, Oliver, Badawi, Nasser, Wurfl, Joachim, Dieckerhoff, Sibylle

Year:

2015

Language:

english

File:

PDF, 332 KB

english, 2015

42

[IEEE 2015 IEEE Energy Conversion Congress and Exposition - Montreal, QC, Canada (2015.9.20-2015.9.24)] 2015 IEEE Energy Conversion Congress and Exposition (ECCE) - Investigation of the dynamic on-state resistance of 600V normally-off and normally-on GaN HEMTs

Badawi, Nasser, Hilt, Oliver, Behat-Treidel, Eldad, Bocker, Jan, Wurfl, Joachim, Dieckerhoff, Sibylle

Year:

2015

Language:

english

File:

PDF, 760 KB

english, 2015

43

[IEEE ESSDERC 2015 - 45th European Solid-State Device Research Conference - Graz, Austria (2015.9.14-2015.9.18)] 2015 45th European Solid State Device Research Conference (ESSDERC) - E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

Capriotti, Mattia, Fleury, Clement, Bethge, Ole, Rigato, Matteo, Lancaster, Suzanne, Pogany, Dionyz, Strasser, Gottfried, Bahat-Treidel, Eldad, Brunner, Oliver Hilt Frank, Wurfl, Joachim

Year:

2015

Language:

english

File:

PDF, 1.11 MB

english, 2015

44

UV laser drilling of SiC for semiconductor device fabrication

Krüger, Olaf, Schöne, Gerd, Wernicke, Tim, John, Wilfred, Würfl, Joachim, Tränkle, Günther

Journal:

Journal of Physics Conference Series

Year:

2007

Language:

english

File:

PDF, 2.52 MB

english, 2007

45

[IEEE 2014 9th European Microwave Integrated Circuits Conference (EuMIC) - Rome, Italy (2014.10.6-2014.10.7)] 2014 9th European Microwave Integrated Circuit Conference - VSWR testing of RF-power GaN transistors

Bengtsson, Olof, Chevtchenko, Serguei, Chowdhary, Amitabh, Heinrich, Wolfgang, Wurfl, Joachim

Year:

2014

Language:

english

File:

PDF, 283 KB

english, 2014

46

[IEEE 2014 44th European Microwave Conference (EuMC) - Rome (2014.10.6-2014.10.9)] 2014 44th European Microwave Conference - VSWR testing of RF-power GaN transistors

Bengtsson, Olof, Chevtchenko, Serguei, Chowdhary, Amitabh, Heinrich, Wolfgang, Wurfl, Joachim

Year:

2014

Language:

english

File:

PDF, 287 KB

english, 2014

47

Fast GaN based Schottky diodes on Si(111) substrate with low onset voltage and strong reverse blocking

Treidel, Eldad Bahat, Hilt, Oliver, Wentzel, Andreas, Würfl, Joachim, Tränkle, Günther

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 364 KB

english, 2013

48

[IEEE 2016 IEEE MTT-S International Wireless Symposium (IWS) - Shanghai, China (2016.3.14-2016.3.16)] 2016 IEEE MTT-S International Wireless Symposium (IWS) - MMIC GaN power amplifier with bidirectional operation for RF-to-DC conversion

Moura, Tiago, Jang, Wonhoon, Cruz, Pedro, Belo, Daniel, Carvalho, Nuno B., Chevtchenko, Serguei, Janke, Bernd, Wurfl, Joachim

Year:

2016

Language:

english

File:

PDF, 725 KB

english, 2016

49

Polarization-Engineered n + GaN/InGaN/AlGaN/GaN Normally-Off MOS HEMTs

Gregušová, Dagmar, Blaho, Michal, Haščík, Štefan, Šichman, Peter, Laurenčíková, Agáta, Seifertová, Alena, Dérer, Ján, Brunner, Frank, Würfl, Joachim, Kuzmík, Ján

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 695 KB

english, 2017

50

Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology

Osipov, Konstantin, Ostermay, Ina, Bodduluri, Maniteja, Brunner, Frank, Trankle, Gunter, Wurfl, Joachim

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.82 MB

english, 2018